US PATENT SUBCLASS 438 / 331
.~.~.~ Having same doping as emitter or collector

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
329  DF  .~ Including passive device (e.g., resistor, capacitor, etc.) {1}
330  DF  .~.~ Resistor {2}
331.~.~.~ Having same doping as emitter or collector

DEFINITION

Classification: 438/331

Having same doping as emitter or collector:

(under subclass 330) Process wherein the resistor region has the same doping profile (i.e., is formed in the same step) as either the emitter or collector region of the bipolar transistor with which the resistor is combined.

(1) Note. Most resistors in bipolar integrated circuits are formed with the same doping step as the bipolar transistor base regions. Resistors that are instead formed at the same doping step as the emitter or collector, rather than the base, go in this subclass.