US PATENT SUBCLASS 438 / FOR 318
.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 318.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)

DEFINITION

Classification: 438/FOR.318

Edge diffusion by using edge portion of structure other than masking layer to mask:

Foreign art collection for processes using and edge portion of the device (other than masking layer) functioning as a mask.