438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
FOR 340 | DF | MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13} |
FOR 349 | DF | .~ Forming plural layered electrode (437/189) {6} |
FOR 352 | .~.~ Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192) |