US PATENT SUBCLASS 438 / 189
.~.~ And bipolar transistor


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
189.~.~ And bipolar transistor


DEFINITION

Classification: 438/189

And bipolar transistor:

(under subclass 186) Process for making a junction gate field effect transistor which additionally contains a bipolar transistor.