US PATENT SUBCLASS 438 / 274
.~.~.~.~ Short formed in recess in substrate


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
268  DF  .~.~ Vertical channel {3}
273  DF  .~.~.~ Having integral short of source and base regions {1}
274.~.~.~.~ Short formed in recess in substrate


DEFINITION

Classification: 438/274

Short formed in recess in substrate:

(under subclass 273) Process wherein the integral short is formed in a groove in the semiconductor substrate