| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
| 268 | DF | .~.~ Vertical channel {3} |
| 273 | DF | .~.~.~ Having integral short of source and base regions {1} |
| 274 | | .~.~.~.~ Short formed in recess in substrate |