US PATENT SUBCLASS 438 / 422
.~.~ Enclosed cavity

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
421  DF  .~ Having air-gap dielectric (e.g., groove, etc.) {1}
422.~.~ Enclosed cavity

DEFINITION

Classification: 438/422

Enclosed cavity:

(under subclass 421) Process wherein the air-gap dielectric is in the form of an enclosed cavity or void between the laterally spaced semiconductive regions.