US PATENT SUBCLASS 438 / 421
.~ Having air-gap dielectric (e.g., groove, etc.)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
421.~ Having air-gap dielectric (e.g., groove, etc.) {1}
422  DF  .~.~> Enclosed cavity

DEFINITION

Classification: 438/421

Having air-gap dielectric (e.g., groove, etc.):

(under subclass 400) Process for making an electrically isolated laterally spaced semiconductor structure resulting in laterally spaced semiconductive regions separated at least in part by a recessed air-gap feature relative to the

surrounding surface (e.g., groove, trench, notch, etc.).

SEE OR SEARCH THIS CLASS, SUBCLASS:

411, for a process of forming a total dielectric isolation structure utilizing air isolation.