US PATENT SUBCLASS 438 / 407
.~.~ Nondopant implantation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
407.~.~ Nondopant implantation

DEFINITION

Classification: 438/407

Nondopant implantation:

(under subclass 404) Process for making a total dielectric isolation semiconductor structure including a step of ion implantation of a nonelectrically active impurity into a semiconductive region of the substrate.

(1) Note. The nondopant may react with the semiconductor region to produce a dielectric material embedded in the semiconductor region.