US PATENT SUBCLASS 438 / 281
.~.~ Having fuse or integral short

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
281.~.~ Having fuse or integral short

DEFINITION

Classification: 438/281

Having fuse or integral short:

(under subclass 197) Process for making an insulated gate field effect transistor which possesses a structure alterable to a nonconductive state (i.e., fuse) or an integral electrical connection between source and gate regions or between drain and gate regions.

SEE OR SEARCH THIS CLASS, SUBCLASS:

132, for a process of making an array of electrical devices and selectively interconnecting the devices via fusible links.

238, for a process of making an insulated gate field effect transistor combined with a resistor.