US PATENT SUBCLASS 438 / 411
.~.~ Air isolation (e.g., beam lead supported semiconductor islands, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
411.~.~ Air isolation (e.g., beam lead supported semiconductor islands, etc.) {1}
412  DF  .~.~.~> Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

DEFINITION

Classification: 438/411

Air isolation (e.g., beam lead supported semiconductor islands, etc.):

(under subclass 404) Process for making a total dielectric isolation structure wherein the resulting structure has islands of semiconductor material supported by beam leads and separated by air.

SEE OR SEARCH THIS CLASS, SUBCLASS:

461, for a process of depositing electrically conductive material to a semiconductive substrate and subsequently removing portions of the substrate to separate the same into beam leaded semiconductor devices.

619, for process of depositing an electrically conductive structure (i.e., metallization) upon a semiconductive substrate contacting spaced regions thereupon utilizing an air-gap dielectric.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors,

Solid-State Diodes),

522, for an air bridge isolated integrated circuit structure.