US PATENT SUBCLASS 438 / 412
.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
411  DF  .~.~ Air isolation (e.g., beam lead supported semiconductor islands, etc.) {1}
412.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

DEFINITION

Classification: 438/412

Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.):

(under subclass 411) Process for making a total dielectric isolation semiconductor structure wherein laterally spaced semiconductor islands are formed upon an insulative substrate or layer.