US PATENT SUBCLASS 438 / FOR 171
.~.~.~ Having projected range less than thickness of dielectrics on substrate (437/37)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 171.~.~.~ Having projected range less than thickness of dielectrics on substrate (437/37)

DEFINITION

Classification: 438/FOR.171

Having projected range less than thickness of dielectrics on substrate:

Foreign art collection for processes include the step of limiting the projected range of the ion energy to be less than the combined thickness of the dielectric material on the substrate.