US PATENT SUBCLASS 438 / 227
.~.~.~.~.~ Having well structure of opposite conductivity type

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
218  DF  .~.~.~ Including isolation structure {4}
225  DF  .~.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS) {2}
227.~.~.~.~.~ Having well structure of opposite conductivity type {1}
228  DF  .~.~.~.~.~.~> Plural wells

DEFINITION

Classification: 438/227

Having well structure of opposite conductivity type:

(under subclass 225) Process for making complementary insulated gate field effect transistors including a step of forming a well of opposite conductivity to the adjoining semiconductor regions in which well is formed an insulated gate field effect transistor of opposite conductivity type to an insulated gate field effect transistor located in the adjoining semiconductor region.