US PATENT SUBCLASS 438 / 225
.~.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
218  DF  .~.~.~ Including isolation structure {4}
225.~.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS) {2}
226  DF  .~.~.~.~.~> With epitaxial semiconductor layer formation
227  DF  .~.~.~.~.~> Having well structure of opposite conductivity type {1}

DEFINITION

Classification: 438/225

Recessed oxide formed by localized oxidation (i.e., LOCOS):

(under subclass 218) Process for making complementary insulated gate field effect transistors wherein lateral isolation means is provided by a step of selectively

oxidizing semiconductive regions of the substrate.