US PATENT SUBCLASS 438 / FOR 205
.~.~.~.~.~ Active step for controlling threshold voltage (437/45)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 173  DF  .~.~.~ Involving Schottky contact formation (437/39) {12}
FOR 202  DF  .~.~.~.~ Gate structure constructed of diverse dielectrics (437/42) {20}
FOR 205.~.~.~.~.~ Active step for controlling threshold voltage (437/45)

DEFINITION

Classification: 438/FOR.205

Active step for controlling threshold voltage:

Foreign art collection for processes involving the step of

regulating the threshold voltage of the device.