US PATENT SUBCLASS 438 / 576
.~.~ Into grooved or recessed semiconductor region

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

570  DF  FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4}
572  DF  .~ Compound semiconductor {2}
576.~.~ Into grooved or recessed semiconductor region {2}
577  DF  .~.~.~> Utilizing lift-off
578  DF  .~.~.~> Forming electrode of specified shape (e.g., slanted, etc.) {1}

DEFINITION

Classification: 438/576

Into grooved or recessed semiconductor region:

(under subclass 572) Processes wherein the contact is formed in a recess in the semiconductor substrate.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

284, for a field effect device having a Schottky gate residing in a groove.