US PATENT SUBCLASS 438 / FOR 250
.~.~.~ Forming recess in substrate and refilling (437/90)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 249  DF  .~.~ Growth through opening (437/89) {2}
FOR 250.~.~.~ Forming recess in substrate and refilling (437/90) {1}
FOR 251  DF  .~.~.~.~> By liquid phase epitaxy (437/91)

DEFINITION

Classification: 438/FOR.250

Forming recess in substrate and refilling:

Foreign art collection for processes for making a depression in the base material and placing a filling material in the same.