US PATENT SUBCLASS 438 / 487
.~.~.~ Utilizing wave energy (e.g., laser, electron beam, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
482  DF  .~ Amorphous semiconductor {4}
486  DF  .~.~ And subsequent crystallization {1}
487.~.~.~ Utilizing wave energy (e.g., laser, electron beam, etc.)

DEFINITION

Classification: 438/487

Utilizing wave energy (e.g., laser, electron beam, etc.):

(under subclass 486) Process whereby the crystallization is affected by the application of a source of wave energy to the amorphous semiconductor.