US PATENT SUBCLASS 438 / 486
.~.~ And subsequent crystallization

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
482  DF  .~ Amorphous semiconductor {4}
486.~.~ And subsequent crystallization {1}
487  DF  .~.~.~> Utilizing wave energy (e.g., laser, electron beam, etc.)

DEFINITION

Classification: 438/486

And subsequent crystallization:

(under subclass 482) Process having a step of depositing an amorphous semiconductor layer combined with the subsequent crystallization of the amorphous semiconductor layer.

SEE OR SEARCH CLASS

117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, appropriate subclasses for the process of single crystallization and perfecting steps therewith.