US PATENT SUBCLASS 438 / FOR 395
.~ Of a dielectric or insulative material (437/235)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 385  DF  INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225) {9}
FOR 395.~ Of a dielectric or insulative material (437/235) {4}
FOR 396  DF  .~.~> Containing Group III atom (437/236) {1}
FOR 398  DF  .~.~> Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238) {2}
FOR 401  DF  .~.~> Si (Silicon) and N (Nitrogen) (437/241) {1}
FOR 403  DF  .~.~> Directly on semiconductor substrate (437/243) {1}

DEFINITION

Classification: 438/FOR.395

Of a dielectric or insulative material:

Foreign art collection for processes wherein the coating or

etchant is applied to a nonconducting substrate.