US PATENT SUBCLASS 438 / 714
.~.~.~.~ Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
714.~.~.~.~ Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)

DEFINITION

Classification: 438/714

Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.):

(under subclass 710) Processes wherein a parameter influencing material removal, such as energizing power, gas etchant composition, temperature, etc., is varied during the etching process.