US PATENT SUBCLASS 438 / FOR 210
.~.~.~ Forming electrodes in laterally spaced relationships (437/50)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 210.~.~.~ Forming electrodes in laterally spaced relationships (437/50)

DEFINITION

Classification: 438/FOR.210

Forming electrodes in laterally spaced relationships:

Foreign art collection for processes for forming electrodes spaced laterally one from the other.