US PATENT SUBCLASS 438 / FOR 223
.~.~ By forming vertical isolation combining dielectric and PN junction (437/63)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 223.~.~ By forming vertical isolation combining dielectric and PN junction (437/63)

DEFINITION

Classification: 438/FOR.223

By forming vertical isolation combining dielectric and PN junction:

Foreign art collection for processes wherein an upright isolation is formed by joining an insulative area with a PN junction.