US PATENT SUBCLASS 438 / FOR 233
.~.~.~.~.~ Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 224  DF  .~.~ Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64) {3}
FOR 229  DF  .~.~.~ Recessed oxide by localized oxidation (437/69) {3}
FOR 232  DF  .~.~.~.~ Preliminary etching of groove (437/72) {1}
FOR 233.~.~.~.~.~ Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)

DEFINITION

Classification: 438/FOR.233

Using overhanging oxidation mask and pretreatment of recessed walls:

Foreign art collection for processes wherein the etching step produces an overhanging oxidation mask with a pretreatment of the recessed walls.