US PATENT SUBCLASS 438 / FOR 232
.~.~.~.~ Preliminary etching of groove (437/72)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 224  DF  .~.~ Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64) {3}
FOR 229  DF  .~.~.~ Recessed oxide by localized oxidation (437/69) {3}
FOR 232.~.~.~.~ Preliminary etching of groove (437/72) {1}
FOR 233  DF  .~.~.~.~.~> Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)

DEFINITION

Classification: 438/FOR.232

Preliminary etching of groove:

Foreign art collection for processes including step of etching a farrow before forming the recessed oxide.