US PATENT SUBCLASS 438 / FOR 229
.~.~.~ Recessed oxide by localized oxidation (437/69)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 224  DF  .~.~ Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64) {3}
FOR 229.~.~.~ Recessed oxide by localized oxidation (437/69) {3}
FOR 230  DF  .~.~.~.~> Preliminary formation of guard ring (437/70)
FOR 231  DF  .~.~.~.~> Preliminary anodizing (437/71)
FOR 232  DF  .~.~.~.~> Preliminary etching of groove (437/72) {1}

DEFINITION

Classification: 438/FOR.229

Recessed oxide by localized oxidation:

Foreign art collection for processes for forming the recessed oxide by use of localized oxidation, e.g., using a mask, etc.