US PATENT SUBCLASS 438 / FOR 129
.~.~.~ Composite substrate (156/655.1)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

983  DF  ZENER DIODES {1}
FOR 100  DF  .~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1) {17}
FOR 128  DF  .~.~ Differential etching of a substrate (156/654.1) {2}
FOR 129.~.~.~ Composite substrate (156/655.1) {2}
FOR 130  DF  .~.~.~.~> Substrate contains metallic element or compound (156/656.1)
FOR 131  DF  .~.~.~.~> Substrate contains silicon or silicon compound (156/657.1)

DEFINITION

Classification: 438/FOR.129

Composite substrate:

Foreign art collection for processes wherein a substrate which is plural-layered, multipart, or includes distinct areas made of diverse compositions, is subjected to an etchant which contacts more than one layer, part, or area of the substrate, and results in a differential etching of the substrate.