US PATENT SUBCLASS 438 / 777
.~.~.~.~.~ Microwave gas energizing

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

758  DF  COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
765  DF  .~ By reaction with substrate {4}
769  DF  .~.~ Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.) {2}
775  DF  .~.~.~ Nitridation {1}
776  DF  .~.~.~.~ Using electromagnetic or wave energy {1}
777.~.~.~.~.~ Microwave gas energizing

DEFINITION

Classification: 438/777

Microwave gas energizing:

(under subclass 776) Processes wherein the irradiation is of microwave frequency.

(1) Note. The FCC allowed frequency for microwave energy is 2.45 GHz, with a corresponding wavelength of from 1mm to 1m.

(2) Note. Microwave is a term applied to electromagnetic waves which occupy a region in the electromagnetic spectrum which is bounded by radio waves on the side of longer wavelengths and by infrared waves on the side of shorter wavelengths.