US PATENT SUBCLASS 438 / FOR 259
.~.~ Growing mono and polycrystalline regions simultaneously (437/99)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 259.~.~ Growing mono and polycrystalline regions simultaneously (437/99)

DEFINITION

Classification: 438/FOR.259

Growing mono and polycrystalline regions simultaneously:

Foreign art collection for processes for growing at the same time materials wherein (1) crystallos:graphic orientation of all the basic groups of atoms are the same and (2) monolithic matter containing plural crystals.