US PATENT SUBCLASS 438 / 216
.~.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
216.~.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

DEFINITION

Classification: 438/216

Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound:

(under subclass 199) Process for making complementary

insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.