US PATENT SUBCLASS 438 / 195
.~.~ Plural gate electrodes

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
195.~.~ Plural gate electrodes

DEFINITION

Classification: 438/195

Plural gate electrodes:

(under subclass 186) Process for making a junction gate field effect transistor having plural gate electrodes on either the same or opposite side of the active channel region which serve to control the electrical conduction characteristics of

the semiconductive active channel region.