US PATENT SUBCLASS 438 / 217
.~.~.~ Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
217.~.~.~ Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)


DEFINITION

Classification: 438/217

Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.):

(under subclass 199) Process having a step of introducing an electrically active dopant species into the semiconductor active channel region beneath the gate insulator of at least one of the complementary insulated gate field effect transistors.