US PATENT SUBCLASS 438 / 410
.~.~ Encroachment of separate locally oxidized regions

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
404  DF  .~ Total dielectric isolation {7}
410.~.~ Encroachment of separate locally oxidized regions

DEFINITION

Classification: 438/410

Encroachment of separate locally oxidized regions:

(under subclass 404) Process for making a total dielectric isolation semiconductor structure including a step of oxidation of adjacent semiconductive regions whereby the oxidized regions acquire a touching relationship.