US PATENT SUBCLASS 438 / 276
.~.~.~ Introducing a dopant into the channel region of selected transistors

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
275  DF  .~.~ Making plural insulated gate field effect transistors of differing electrical characteristics {1}
276.~.~.~ Introducing a dopant into the channel region of selected transistors {2}
277  DF  .~.~.~.~> Including forming overlapping gate electrodes
278  DF  .~.~.~.~> After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)

DEFINITION

Classification: 438/276

Introducing a dopant into the channel region of selected transistors:

(under subclass 275) Process for making plural insulated gate field effect transistors having a step of introducing an electrically active dopant species into the semiconductor channel region beneath the gate insulator of one or more transistors to produce transistors of differing electrical characteristics.

SEE OR SEARCH THIS CLASS, SUBCLASS:

130, for processes of rendering electrical devices in an array operable or inoperable by electrically completing or electrically shorting designated devices thereof to selectively interconnect the array.

289, for a process of doping the semiconductor channel region beneath gate insulator to (a) produce field effect transistors of identical electrical characteristics or (b)

alter the electrical characteristics of a single field effect transistor.