US PATENT SUBCLASS 438 / 278
.~.~.~.~ After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
275  DF  .~.~ Making plural insulated gate field effect transistors of differing electrical characteristics {1}
276  DF  .~.~.~ Introducing a dopant into the channel region of selected transistors {2}
278.~.~.~.~ After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)

DEFINITION

Classification: 438/278

After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.):

(under subclass 276) Process for making plural insulated gate field effect transistors of differing electrical characteristics wherein the semiconductor channel region is doped subsequent to the formation of the source and drain regions and the gate electrode.