US PATENT SUBCLASS 438 / FOR 239
.~.~.~ Using polycrystalline region (437/79)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 234  DF  .~.~ Isolation by PN junction only (437/74) {4}
FOR 239.~.~.~ Using polycrystalline region (437/79)

DEFINITION

Classification: 438/FOR.239

Using polycrystalline region:

Foreign art collection for processes wherein polycrystalline areas form isolation regions.