US PATENT SUBCLASS 438 / 332
.~.~.~ Lightly doped junction isolated resistor

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
329  DF  .~ Including passive device (e.g., resistor, capacitor, etc.) {1}
330  DF  .~.~ Resistor {2}
332.~.~.~ Lightly doped junction isolated resistor

DEFINITION

Classification: 438/332

Lightly doped junction isolated resistor:

(under subclass 330) Process wherein the resistive element is in the form of a lightly doped layer of one conductivity type located in a region of opposite conductivity type, such that the pn junction between the resistor region and its containing opposite conductivity-type region serves to electrically isolate the resistor.

(1) Note. A resistor region is considered to be lightly doped if it is substantially less heavily doped than the base region of the bipolar transistor combined therewith, or if it has a doping density not greater than 100 times that of the opposite conductivity-type region in which it is contained.