US PATENT SUBCLASS 438 / 419
.~.~.~.~ Plural doping steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
414  DF  .~ Isolation by PN junction only {3}
416  DF  .~.~ With epitaxial semiconductor formation {2}
418  DF  .~.~.~ Dopant addition {1}
419.~.~.~.~ Plural doping steps

DEFINITION

Classification: 438/419

Plural doping steps:

(under subclass 418) Process for making junction isolated laterally spaced semiconductor regions including multiple steps of introducing an electrically active dopant species into semiconductive regions of the substrate.