| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| 584 | DF | COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2} |
| 597 | DF | .~ To form ohmic contact to semiconductive material {24} |
| 618 | DF | .~.~ Contacting multiple semiconductive regions (i.e., interconnects) {5} |
| 642 |  | .~.~.~ Diverse conductors {6} |
| 643 | DF | .~.~.~.~> At least one layer forms a diffusion barrier |
| 644 | DF | .~.~.~.~> Having adhesion promoting layer |
| 645 | DF | .~.~.~.~> Having planarization step {1} |
| 647 | DF | .~.~.~.~> Having electrically conductive polysilicon component |
| 648 | DF | .~.~.~.~> Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) {1} |
| 650 | DF | .~.~.~.~> Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) {1} |