US PATENT SUBCLASS 438 / 712
.~.~.~.~ Reactive ion beam etching (i.e., RIBE)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

689  DF  CHEMICAL ETCHING {6}
706  DF  .~ Vapor phase etching (i.e., dry etching) {3}
707  DF  .~.~ Utilizing electromagnetic or wave energy {3}
710  DF  .~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.) {17}
712.~.~.~.~ Reactive ion beam etching (i.e., RIBE)

DEFINITION

Classification: 438/712

Reactive ion beam etching (i.e., RIBE):

(under subclass 710) Processes wherein the semiconductor substrate is mounted on the RF-powered electrode of the etching apparatus.