US PATENT SUBCLASS 438 / FOR 165
.~.~.~.~ Forming bipolar transistor (NPN/PNP) (437/31)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 161  DF  .~.~.~ Including multiple implantations of same region (437/27) {4}
FOR 165.~.~.~.~ Forming bipolar transistor (NPN/PNP) (437/31) {2}
FOR 166  DF  .~.~.~.~.~> Lateral bipolar transistor (437/32)
FOR 167  DF  .~.~.~.~.~> Having dielectric isolation (437/33)

DEFINITION

Classification: 438/FOR.165

Forming bipolar transistor (NPN/PNP):

Foreign art collection for processes for making a region of an NPN/PNP transistor (e.g., base or emitter profiling).