| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
| FOR 155 | DF | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
| FOR 161 |  | .~.~.~ Including multiple implantations of same region (437/27) {4} |
| FOR 162 | DF | .~.~.~.~> Through insulating layer (437/28) {1} |
| FOR 164 | DF | .~.~.~.~> Using same conductivity type dopant (437/30) |
| FOR 165 | DF | .~.~.~.~> Forming bipolar transistor (NPN/PNP) (437/31) {2} |
| FOR 168 | DF | .~.~.~.~> Forming complementary MOS (metal oxide semiconductor) (437/34) |