US PATENT SUBCLASS 438 / FOR 402
.~.~.~ By chemical reaction with substrate (437/242)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 385  DF  INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225) {9}
FOR 395  DF  .~ Of a dielectric or insulative material (437/235) {4}
FOR 401  DF  .~.~ Si (Silicon) and N (Nitrogen) (437/241) {1}
FOR 402.~.~.~ By chemical reaction with substrate (437/242)

DEFINITION

Classification: 438/FOR.402

By chemical reaction with substrate:

Foreign art collection for processes wherein the coating or etchant chemically reacts with the base.