US PATENT SUBCLASS 438 / FOR 222
.~.~ By forming total dielectric isolation (437/62)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 222.~.~ By forming total dielectric isolation (437/62)

DEFINITION

Classification: 438/FOR.222

By forming total dielectric isolation:

Foreign art collection for processes for forming complete insulation of current flow surrounding the active regions,

e.g., bathtub, waffle-wafer isolation, etc.