US PATENT SUBCLASS 438 / 537
.~ Fusing dopant with substrate (i.e., alloy junction)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
537.~ Fusing dopant with substrate (i.e., alloy junction) {3}
538  DF  .~.~> Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
539  DF  .~.~> Application of pressure to material during fusion
540  DF  .~.~> Including plural controlled heating or cooling steps or nonuniform heating {1}

DEFINITION

Classification: 438/537

Fusing dopant with substrate (i.e., alloy junction):

(under subclass 510) Processes for incorporating an electrically active impurity into a semiconductor material during an operation affecting the partial melting of the substrate.

(1) Note. The impurity contact alloys with a semiconductor material to form a p-type or n-type region, depending on the

impurity used.

SEE OR SEARCH THIS CLASS, SUBCLASS:

470, for a process of fusing a dopant with a semiconductive region by the direct application of electrical current.