US PATENT SUBCLASS 438 / FOR 265
.~.~ Vacuum growing using molecular beam, i.e., vacuum deposition (437/105)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 265.~.~ Vacuum growing using molecular beam, i.e., vacuum deposition (437/105) {2}
FOR 266  DF  .~.~.~> Group IV elements (437/106)
FOR 267  DF  .~.~.~> Compound formed from Group III and Group V elements (437/107)

DEFINITION

Classification: 438/FOR.265

Vacuum growing using molecular beam, i.e., vacuum deposition:

Foreign art collection for processes for growing crystals under a vacuum using a molecular beam. This is sometimes known as molecular beam epitaxy (MBE).