US PATENT SUBCLASS 438 / 280
.~.~ Having underpass or crossunder

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
280.~.~ Having underpass or crossunder

DEFINITION

Classification: 438/280

Having underpass or crossunder:

(under subclass 197) Process for making an insulated gate field effect transistor electrically interconnected to an adjoining electrical device via a conductive structure located within the semiconductor substrate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

214, for a process of making complementary insulated gate field effect transistors combined with an underpass or crossunder.