US PATENT SUBCLASS 438 / FOR 309
.~.~ Forming partially overlapping regions (437/149)
Current as of:
June, 1999
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438 /
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SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
FOR 149
DF
INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)
{7}
FOR 301
DF
.~ Diffusing a dopant (437/141) {17}
FOR 309
.~.~ Forming partially overlapping regions (437/149)
DEFINITION
Classification: 438/FOR.309
Forming partially overlapping regions:
Foreign art collection for processes for permeating an impurity in localized areas which lap over each other in part.