US PATENT SUBCLASS 438 / FOR 309
.~.~ Forming partially overlapping regions (437/149)


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 301  DF  .~ Diffusing a dopant (437/141) {17}
FOR 309.~.~ Forming partially overlapping regions (437/149)


DEFINITION

Classification: 438/FOR.309

Forming partially overlapping regions:

Foreign art collection for processes for permeating an impurity in localized areas which lap over each other in part.