US PATENT SUBCLASS 438 / 383
.~.~ Lightly doped junction isolated resistor

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
382  DF  .~ Resistor {2}
383.~.~ Lightly doped junction isolated resistor

DEFINITION

Classification: 438/383

Lightly doped junction isolated resistor:

(under subclass 382) Process wherein the resistive element is in the form of a lightly doped layer of one conductivity type located in a region of opposite conductivity type, such that the pn junction between the resistor region and its containing opposite conductivity-type region serves to electrically isolate the resistor.