| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 570 | DF | FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4} |
| 572 | DF | .~ Compound semiconductor {2} |
| 573 | ![]() | .~.~ Multilayer electrode {2} |
| 574 | DF | .~.~.~> T-shaped electrode |
| 575 | DF | .~.~.~> Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) |